| PART |
Description |
Maker |
| 2N3209DCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| ZDT795A |
SM-8 DUAL PNP MEDIUM POWER
|
Diodes Incorporated
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏，1安PNP型中等功率晶体管
Si, POWER TRANSISTOR
45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| 2N2894DCSM03 |
DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
Seme LAB
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| BSS69 BSS69R BSS70R BSS70 BSS70R-L7 BSS69-L2 BSS69 |
100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Element Material:Wirewound; Temperature Coefficient: /-50 ppm RoHS Compliant: No
SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
|
ZETEX PLC
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
ZETEX[Zetex Semiconductors]
http://
|
| BCW68 BCW68FR BCW68GR BCW68HR BCW68F BCW68G BCW68H |
PNP Low Sat Transistor
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
| 2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速，饱和硅晶体管开关进步党（高速，饱和开关型进步党硅晶体管）
|
TT electronics Semelab, Ltd.
STMicroelectronics N.V.
SEME-LAB[Seme LAB]
|
| 2SA1969 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
